Boron Precipitates in Ion Implanted Silicon

Metal gettering by boron-silicide precipitates in boron-implanted silicon

Sandia National Laboratories, Albuquerque, New Mexico 871 85-1 056 PT"3 1 j 3 r 3 q a,,3 We show that Fe, Coy Cu, and Au impurities in Si are strongly gettered to boron-silicideprecipitates formed by supersaturation B implantation and annealing. Effective binding fr energies relative to interstitial solution range from somewhat above 1 to more than 2 eV. The B-Si precipitates formed at temperat...

Diffusion of ion implanted boron in preamorphized silicon

Transient enhanced diffusion of boron in preamorphized and subsequently regrown Si was studied by secondary ion mass spectrometry �SIMS� and transmission electron microscopy �TEM�. A comparison of 4 keV, 1� 1014/cm2 boron implants into crystalline and Ge preamorphized silicon was undertaken. Upon annealing the B implant into crystalline material exhibited the well-known transient enhanced diffu...

Interstitial charge states in boron-implanted silicon

It is becoming increasingly clear that simulation models of transient enhanced diffusion sTEDd in silicon need to incorporate interstitial charging effects accurately in order to adequately reproduce experimental data near the surface and near the underlying junction. However, in the case of boron TED, the relevant charge states and ionization levels of both boron and silicon interstitial atoms...

Low-Temperature Activation in Boron Ion-Implanted Silicon by Soft X-Ray Irradiation

DIFFUSION OF SILICON IN ION IMPLANTED GaAs

Silicon is the main n-type dopant used in GaAs, and it is usually incorporated into GaAs by ion implantation or by diffusion employing an external source. Ion implantation is also the only convenient way of introducing impurities exceeding the solid solubility limit. However, ion implantation studies have been done earlier only for concentrations under 10 atoms/cm [1,2]. Experimentally it has b...